MRF587

The RF Line

NPN Silicon

High-Frequency Transistor

. . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband

amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

• Low Noise Figure —

• High Power Gain —

• Ion Implanted

• All Gold Metal System

• Low Intermodulation Distortion:

DIN = 125 dB

µV

• Nichrome Emitter Ballast Resistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

17

Vdc

Collector–Base Voltage

34

Vdc

Emitter–Base Voltage

2.5

Vdc

Collector Current — Continuous

200

mAdc

5.0

33

Watts

mW/

°C

Storage Temperature Range

– 65 to +150

°C

Junction Temperature

200

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

17

—

—

Vdc

Collector–Base Breakdown Voltage

34

—

—

Vdc

Emitter–Base Breakdown Voltage

2.5

—

—

Vdc

Collector Cutoff Current

—

—

50

µAdc

ON CHARACTERISTICS

DC Current Gain (1)

50

—

200

—

NOTE:

(continued)

1. 300

µs pulse on Tektronix 576 or equivalent.

MRF587

NF = 3.0 dB @ 0.5 GHz

HIGH–FREQUENCY

TRANSISTOR

NPN SILICON

CASE 244A–01, STYLE 1

Order this document

by MRF587/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 6