HTB1A80AS datasheet(1/5 Pages) SEMIHOW

No. de pieza	HTB1A80AS

Descripción Electrónicos	1A TRIAC

PDF	5 Pages

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Fabricante Electrónico	SEMIHOW [SemiHow Co.,Ltd.]

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HTB1A80AS

1A TRIAC

VDRM = 1000 V

IT(RMS) = 1 A

ITSM = 11 A

IGT = 5mA

Symbol

Absolute Maximum Ratings

(TJ=25 unless otherwise specified )

Symbol

Parameter

Conditions

Ratings

Unit

VDRM

Repetitive Peak Off-State Voltage

Sine wave, 50/60Hz,

Gate open

1000

V

VRRM

Repetitive Peak Reverse Voltage

1000

V

VDSM

Non-Repetitive Surge Peak Off-State Voltage

1100

V

VRSM

Non-Repetitive Peak Reverse Voltage

1100

V

IT(RMS) R.M.S. On-State Current

Full sine wave, TC = 57oC1

A

ITSM

Non-Repetitive Surge Peak On-State Current

Full sine wave, 50Hz/60Hz

10/11

A

I2t

Fusing Current

t = 10ms

1.12

A2S

PGM

Forward Peak Gate Power

Dissipation

TJ = 125 C

1W

PG(AV)

Forward Average Gate Power

Dissipation

TJ = 125 C

1W

IGM

Peak Gate Current

tp=20us, TJ = 125 C

1A

TJ

Operating Junction Temperature

-40~+125

oC

TSTG

Storage Temperature

-40~+150

oC

FEATURES

Repetitive Peak Off-State Voltage : 1000V

R.M.S On–State Current (IT(RMS) = 1A)

Gate Trigger Current : 5mA

dV/dt 400V/us

General Description

Intended for use in AC static switching and industrial control

systems, driving low power highly inductive load like solenoid,

pump, fan ad micro-motor.

T1

T2

G

TO-92

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