20.11.2012

SPT36-C

1 of 1

SPT36-C

TECHNICAL DATA

Silicone Photo-Transistor, SMD package

SPT36-C is a surface mount type photo-transistor containing a chip with 0.6x0.6 mm active area,

mounted into a ceramic package and covered with silicone. This device is featuring excellent

responsibility of 20 µs and a high photocurrent. It’s designed to be easy of setting up optically with

a wide angle of half sensitivity of ±40 degrees.

Specifications

(Unit: mm)

•

Spectral Responsivity (Peak):

900 nm

•

Chip Size:

0.8 x 0.8 mm

•

Active Area:

0.6 x 0.6 mm

•

Package:

SMD

Type:

Ceramics

Resin Material:

Silicone

Item

Symbol

Value

Unit

C-E Breakdown Voltage

30

V

E-C Breakdown Voltage

5

V

Collector Current

10

mA

Collector Dissipation

50

mW

Operating Temperature

-25 … +125

°C

Storage Temperature

-30 … +100

°C

240

°C

Electro-Optical Characteristics

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Photo Current

1

3

-

mA

Collector Dark Current

-

-

200

nA

Collector-Emitter Satu. Voltage

-

-

0.3

V

Spectral Responsivity (Peak)

-

900

-

nm

Half Angle of Sensitivity

±40

-

deg

Rise Time (10-90%)

-

20

-

µs

Fall Time (10-90%)

-

20

-

µs

Note:

The above specifications are for reference purpose only and subjected to change without prior notice.