STP45L01F datasheet(1/7 Pages) SAMHOP

No. de pieza	STP45L01F

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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Ver1.0

S mHop Microelectronics C orp.

a

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

TO-220F Package.

N-Channel Enhancement Mode Field Effect Transistor

www.samhop.com.tw

Jun,03,2010

1

Details are subject to change without notice.

S

G

D

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Typ

100V

40A

20

@

VGS=10V

G D S

STF SERIES

TO-220F

STP45L01F

Green

Product

Symbol

VDS

VGS

IDM

EAS

2

50

W

A

PD

°C

62.5

-55 to 150

ID

Units

Parameter

100

40

118

°C/W

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

°C/W

560

mJ

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

TC=25°C

-Pulsed

b

A

Avalanche Energy

d

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R JC

R JA

A

32

TC=70°C

40

W

a

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