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SP2013 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza SP2013
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SP2013 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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Ver 1.1
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
-1
IGSS
±100
nA
VGS(th)
-0.5
V
m ohm
VGS=-4.5V , ID=-4.25A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=-1.0mA
VDS=-16V , VGS=0V
VGS= ±12V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
ON CHARACTERISTICS
SP2013
-0.9
-1.3
gFS
25
S
CISS
1860
pF
COSS
300
pF
CRSS
258
pF
Qg
39
nC
81
nC
Qgs
126
nC
Qgd
58
tD(ON)
23
ns
tr
1.8
ns
tD(OFF)
9.2
ns
tf
ns
Gate-Drain Charge
VDS=-10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-16V
ID=-4.25A
VGS=-4.5V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=-10V , ID=-4.25A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Reverse Transfer Capacitance
VGS=-4.0V , ID=-4.25A
m ohm
c
f=1.0MHz
c
VDS=-16V,ID=-8.5A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=-8.5A
-0.85
-1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
_
_
www.samhop.com.tw
Jul,18,2013
2
_
16
20
16.5
21
VGS=-3.7V , ID=-4.25A
m ohm
VGS=-2.5V , ID=-4.25A
m ohm
22
28
12
12.5
18
VGS=-3.1V , ID=-4.25A
m ohm
19
25
14
17
22
13



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