SDF07N50 datasheet(3/11 Pages) SAMHOP

No. de pieza	SDF07N50

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	11 Pages

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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Tj( C )

Ver 2.1

www.samhop.com.tw

Dec,24,2013

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

V DS =V GS

ID=250uA

1.10

1.05

1.00

0.95

0.90

0.85

1.15

125 150

100

-25

-50

ID=250uA

9.0

7.2

5.4

1.8

T j=125 C

25 C

-55 C

1.8

1.5

1.2

0.9

0.6

0.3

V GS =10V

3.0

2.6

2.2

1.8

1.4

1.0

100

125

150

V GS =10V

ID=3.5A

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

VGS =5V

VGS =10V

VGS =6V

ID, Drain Current(A)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Tj, Junction Temperature(° C )

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Breakdown Voltage Variation

with Temperature

1.2

7.2

6.0

4.8

3.6

2.4

VGS =7V

SDP07N50

SDF07N50

3.6

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