06.10.2010

LED18FC-TEC-PR

1 of 2

LED18FC-TEC-PR

TECHNICAL DATA

Mid-Infrared Light Emitting Diode, Flip-Chip Design

Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown

on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

LED18FC-TEC-PR has a stable ouput power and a lifetime more then 80000 hours.

Features

• Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design

• Peak Wavelength: typ. 1.85 µm

• Optical Ouput Power: typ. 0.9 mW qCW

• Package: TO-5, with TEC, thermistor, PR and window

Specifications

Rating

Item

Condition

Min.

Typ.

Max.

Unit

Peak Wavelength

T=300 K

1.80

1.85

1.89

µm

FWHM

150 mA CW

100

150

200

nm

Quasi-CW

Optical Power

200 mA qCW

0.7

0.9

1.4

mW

Pulsed

Optical Power

1 A

15

20

35

mW

Switching Time

T=300 K

10

20

30

ns

Operation Voltage

200 mA qCW

V

Operating

Temperature

-240 … +50

°C

Emitting Area

670x770

µm

Soldering

Temperature

180

°C

Package

TO-5, with built-in thermocooler, thermoresistor,

parabolic reflector and quartz window

(Unit: mm)

Operating Regime

Quasi-CW

•

Maximum current 220 mA

•

Recommended current 150-200mA

Pulsed

•

Maximum current 1 A

(puls lenght 500 ns, repetition rate 2kHz)