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TSC5804DCPROG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSC5804DCPROG
Descripción Electrónicos  High Voltage Fast-Switching NPN Power Transistor
PDF  6 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5804DCPROG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSC5804D
Taiwan Semiconductor
Document Number: DS_P0000181
2
Version: B15
ELECTRICAL SPECIFICATIONS (T
A = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Collector-Base Voltage
IC =0.5mA
BVCBO
1050
--
--
V
Collector-Emitter Breakdown Voltage
IC =5mA
BVCEO
450
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA
BVEBO
15
--
--
V
Collector Cutoff Current
VCE =400V, IB=0
ICEO
--
10
250
µA
Collector Cutoff Current
VCB =950V, IE =0
ICBO
--
--
10
µA
Collector-Emitter Saturation Voltage
IC=1A, IB =0.2A
VCE(SAT)1
---
--
0.5
V
Collector-Emitter Saturation Voltage
IC=3.5A, IB =1A
VCE(SAT)2
---
1.5
2.0
V
Base-Emitter Saturation Voltage
IC=3.5A, IB =1A
VBE(SAT)1
--
1.1
1.5
V
DC Current Gain
VCE =5V, IC =0.1A
hFE1
50
70
100
VCE =3V, IC =0.8A
hFE2
25
30
50
Diode Forward Voltage
IC=2A
VF
--
--
1.5
V
Rise Time
(Note 2)
VCC =5V, IC =0.5A
tr
--
--
1
µs
Storage Time
(Note 2)
tSTG
4.5
5
5.5
µs
Fall Time
(Note 2)
tf
--
--
1.2
µs
Repetitive Avalanche Energy
L=2mH
EAR
6
--
--
mJ
Notes:
1.
Pulse test:
≤380µs, duty cycle ≤ 2%
2.
For DESIGN AID ONLY, not subject to production testing.



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