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MBRF835CT Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBRF835CT Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page ![]() CREAT BY ART - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM 35 45 50 60 90 100 150 V VRMS 24 31 35 42 63 70 105 V VDC 35 45 50 60 90 100 150 V IF(AV) A dV/dt V/μs RθJC OC/W TJ OC TSTG OC Document Number: DS_D131012 Version: I13 MBRF835CT thru MBRF8150CT Taiwan Semiconductor Dual Common Cathode Schottky Rectifier FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case: ITO-220AB Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBRF 835 CT MBRF 845 CT MBRF 850 CT MBRF 860 CT MBRF 890 CT Maximum DC blocking voltage Maximum average forward rectified current 8 MBRF 8100 CT MBRF 8150 CT UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage V Maximum instantaneous forward voltage (Note 1) IF= 4 A VF Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A - 55 to +150 mA 15 10 5 Voltage rate of change (Rated VR) 10000 Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR 0.1 Note 1: Pulse test with PW=300μs, 1% duty cycle 0.55 0.70 0.85 0.95 Typical thermal resistance 6 Operating junction temperature range - 55 to +150 Storage temperature range |
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