| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
AN4355 Datasheet(PDF) 23 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN4355 Datasheet(HTML) 23 Page - STMicroelectronics |
|
23 / 25 page ![]() DocID025240 Rev 2 23/25 AN4355 Layout suggestions 25 8 Layout suggestions The L648x devices require external MOSFETs for implementing the power stage which drives the motor phases. The electrical connections between the device and the external MOSFETs are critical and particular attention must be paid to reduce parasitic inductances. Figure 16 shows the critical paths which should be designed to be as short as possible and the area of the circuits should be minimized avoiding the sensitivity of such structures to the surrounding noise. Typically, a good power system layout keeps the power MOSFETs as close as possible to the related gate driver. Figure 16. Layout critical paths |
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |