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1998

©

Document No. D16129EJ2V0DS00 (2nd edition)

Date Published July 2002 N CP(K)

Printed in Japan

SILICON TRANSISTOR

2SB1453

PNP SILICON EPITAXIAL POWER TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SB1453 is a power transistor that can directly drive from

the IC output. This transistor is ideal for motor drivers and solenoid

drivers in such as OA and FA equipment.

In addition, a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting

cost.

FEATURES

• High DC current amplifier ratio

• Mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

−60

V

Collector to emitter voltage

−60

V

Emitter to base voltage

−7.0

V

Collector current (DC)

−3.0

A

Collector current (pulse)

−6.0

A

Base current (DC)

−1.0

A

Total power dissipation

°C)

25

W

Total power dissipation

°C)

2.0

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

1. Base

2. Collector

3. Emitter