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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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AN2785 Datasheet(PDF) 29 Page - STMicroelectronics |
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AN2785 Datasheet(HTML) 29 Page - STMicroelectronics |
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29 / 51 page  AN2785 Application examples Doc ID 14785 Rev 1 29/51 Figure 21. Total equivalent circuit for turn-OFF Given the equivalent circuits in Figure 21 and the approximations on the power IGBT’s (MOSFET) switching behavior, the timings are the following. As above, CISS_max is used because when the Vce (or Vds) of the power IGBT (or MOSFET) is minimum (equal to Vce_sat), the CISS (which depends on the Vce) shows its maximum value. Even if they are just approximations, Tfall and Trise are very important values to be estimated because they provide an indication about the power dissipation during the switching of the power IGBT (or MOSFET), which can be approximated as indicated in Figure 22 . RGATE RDSon_sink Cge = Ciss_max Vge Isink Toff RGATE RDSon_sink Vge_p Isink Trise + () ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ ⋅ ⋅ + = p _ Vge VCC ln C R R T max _ ISS GATE k sin _ DSon OFF ( ) p _ Vge R R Q I Q T GATE k sin _ DSon GC SINK GC RISE + ⋅ = = |
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