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UI6008 Datasheet(PDF) 2 Page - Unitpower Technology Limited

No. de pieza UI6008
Descripción Electrónicos  N-Ch 60V Fast Switching MOSFETs
PDF  4 Pages
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Fabricante Electrónico  UNITPOWER [Unitpower Technology Limited]
Página de inicio  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UI6008 Datasheet(HTML) 2 Page - Unitpower Technology Limited

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N-Ch 60V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.054
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=10A
---
70
90
m
Ω
VGS=4.5V , ID=8A
---
80
100
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
---
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.96
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=48V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=10A
---
7.6
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.2
4.5
Ω
Qg
Total Gate Charge (4.5V)
VDS=48V , VGS=4.5V , ID=10A
---
4.9
6.9
nC
Qgs
Gate-Source Charge
---
1.8
2.52
Qgd
Gate-Drain Charge
---
2.2
3.1
Td(on)
Turn-On Delay Time
VDS=30V , VGS=10V , RG=3.3Ω,
ID=10A
---
1.6
3.2
ns
Tr
Rise Time
---
7.4
13
Td(off)
Turn-Off Delay Time
---
17.6
35
Tf
Fall Time
---
4
8
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
511
715
pF
Coss
Output Capacitance
---
38
53
Crss
Reverse Transfer Capacitance
---
25
35
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=5A
2.5
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
10
A
ISM
Pulsed Source Current
2,6
---
---
20
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=10A , dI/dt=100A/µs , TJ=25℃
---
9.7
---
nS
Qrr
Reverse Recovery Charge
---
6.1
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
UI6008



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