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UD4006 Datasheet(PDF) 2 Page - Unitpower Technology Limited

No. de pieza UD4006
Descripción Electrónicos  N-Ch 40V Fast Switching MOSFETs
PDF  4 Pages
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Fabricante Electrónico  UNITPOWER [Unitpower Technology Limited]
Página de inicio  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UD4006 Datasheet(HTML) 2 Page - Unitpower Technology Limited

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N-Ch 40V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.034
---
V/℃
VGS=10V , ID=12A
---
6
7.5
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V , ID=10A
---
8
10
m
Ω
VGS(th)
Gate Threshold Voltage
1.0
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-4.96
---
mV/℃
VDS=32V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=32V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=12A
---
39
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.6
3.2
Ω
Qg
Total Gate Charge (4.5V)
---
18.8
Qgs
Gate-Source Charge
---
4.7
Qgd
Gate-Drain Charge
VDS=20V , VGS=4.5V , ID=12A
---
8.2
nC
Td(on)
Turn-On Delay Time
---
14.3
Tr
Rise Time
---
2.6
Td(off)
Turn-Off Delay Time
---
77
Tf
Fall Time
VDD=15V , VGS=10V , RG=3.3Ω
ID=1A
---
4.8
ns
Ciss
Input Capacitance
---
2332
Coss
Output Capacitance
---
193
Crss
Reverse Transfer Capacitance
VDS=15V , VGS=0V , f=1MHz
---
138
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=24A
63
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
60
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
120
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=39A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
UD4006



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