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AN3432 Datasheet(PDF) 22 Page - STMicroelectronics

No. de pieza AN3432
Descripción Electrónicos  How to choose a bypass diode for a silicon panel junction box
PDF  24 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3432 Datasheet(HTML) 22 Page - STMicroelectronics

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Conclusion
AN3432
22/24
Doc ID 019041 Rev 1
5
Conclusion
This application note provides the means to select the best bypass diode device based on
junction box or PV module specifications. This diode selection will depend on its technology
trade off - forward drop voltage versus reverse current. ST offers a broad range of Schottky
diode from 10 to 60 A and 20 V to 45 V ratings. Their low leakage current is a distinctive
performance that has allowed more than 50 million pieces to be assembled successfully in
2011. Future trends should allow the extension of their maximum temperature to 200 °C
while covering the increased maximum current up to 15 A for the stringent junction box
thermal test.



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