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IRGPC40UD2 Datasheet(PDF) 1 Page - International Rectifier |
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IRGPC40UD2 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page ![]() C-717 IRGPC40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve E G n-channel C VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, IC = 20A Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT — — 0.77 RθJC Junction-to-Case - Diode — — 1.7 °C/W RθCS Case-to-Sink, flat, greased surface — 0.24 — RθJA Junction-to-Ambient, typical socket mount — — 40 Wt Weight — 6 (0.21) — g (oz) Thermal Resistance Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC UltraFast CoPack IGBT PD - 9.808A Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 40 IC @ TC = 100°C Continuous Collector Current 20 ICM Pulsed Collector Current 160 A ILM Clamped Inductive Load Current 160 IF @ TC = 100°C Diode Continuous Forward Current 15 IFM Diode Maximum Forward Current 160 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m) Revision 0 Next Data Sheet Index Previous Datasheet To Order |
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