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IRFP150 Datasheet(PDF) 2 Page - International Rectifier |
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IRFP150 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFP150N 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA D V(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.036 W VGS = 10V, ID = 23A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 14 ––– ––– S VDS = 25V, ID = 22A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 110 ID = 22A Qgs Gate-to-Source Charge ––– ––– 15 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 58 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V tr Rise Time ––– 56 ––– ID = 22A td(off) Turn-Off Delay Time ––– 45 ––– RG = 3.6W tf Fall Time ––– 40 ––– RD = 2.9W, See Fig. 10
Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1900 ––– VGS = 0V Coss Output Capacitance ––– 450 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 5.0 IDSS Drain-to-Source Leakage Current 13 Starting TJ = 25°C, L = 1.7mH RG = 25W , IAS = 22A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: I SD £ 22A, di/dt £ 180A/µs, V DD £ V(BR)DSS, TJ £ 175°C Pulse width £ 300µs; duty cycle £ 2%.
Uses IRF1310N data and test conditions Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)
––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =23A, VGS = 0V trr Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = 22A Qrr Reverse RecoveryCharge ––– 1.2 1.8 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 42 140 S D G |
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