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IRFL014N Datasheet(PDF) 2 Page - International Rectifier |
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IRFL014N Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFL014N 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.16 Ω VGS = 10V, ID = 1.9A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 1.6 ––– ––– S VDS = 25V, ID = 0.85A ––– ––– 1.0 µA VDS = 44V, VGS = 0V ––– ––– 25 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– 7.0 11 ID = 1.7A Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– 3.3 5.0 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 6.6 ––– VDD = 28V tr Rise Time ––– 7.1 ––– ID = 1.7A td(off) Turn-Off Delay Time ––– 12 ––– RG = 6.0Ω tf Fall Time ––– 3.3 ––– RD = 16Ω, See Fig. 10 Ciss Input Capacitance ––– 190 ––– VGS = 0V Coss Output Capacitance ––– 72 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 33 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V trr Reverse Recovery Time ––– 41 61 ns TJ = 25°C, IF = 1.7A Qrr Reverse RecoveryCharge ––– 64 95 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– 15 1.3 A Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 1.7A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: V DD = 25V, starting TJ = 25°C, L = 8.2mH RG = 25Ω, IAS = 3.4A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. |
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