MJE170_15 datasheet(2/3 Pages) SECOS

No. de pieza	MJE170

Descripción Electrónicos	PNP General Purpose Transistor

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

Página de inicio	http://www.secosgmbh.com

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2 / 3 page

MJE170 / MJE171 / MJE172

PNP General Purpose Transistor

Elektronische Bauelemente

25-Nov-2010 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Emitter Cut - Off Current

IEBO

0.1

A

VEB = -7V, IC = 0

DC Current Gain

hFE(1)

250

VCE = -1V, IC = -100 mA

hFE(2)

VCE = -1V, IC = -500 mA

hFE(3)

VCE = -1V, IC = -1.5A

Collector - Emitter Saturation Voltage

VCE(sat)1

-0.3

IC = -500mA, IB = -50 mA

VCE(sat)2

-0.9

IC = -1.5A, IB = -150 mA

VCE(sat)3

-1.7

IC = -3A, IB = -600 mA

Base – Emitter Saturation Voltage

VBE(sat)1

-1.5

IC = -1.5A, IB = -150 mA

VBE(sat)2

-2

IC = -3A, IB = -600 mA

Base – Emitter Voltage

VBE

-1.2

VCE = -1V, IC = -500 mA

Transition Frequency

f T

MHz

VCE = -10V, IC = -100 mA

Collector output capacitance

COB

VCB = -10V, IE = 0, f = 0.1MHz

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