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RFP2P10 Datasheet(PDF) 3 Page - Intersil Corporation

No. de pieza RFP2P10
Descripción Electrónicos  -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
PDF  5 Pages
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Fabricante Electrónico  INTERSIL [Intersil Corporation]
Página de inicio  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFP2P10 Datasheet(HTML) 3 Page - Intersil Corporation

  RFP2P10 Datasheet HTML 1Page - Intersil Corporation RFP2P10 Datasheet HTML 2Page - Intersil Corporation RFP2P10 Datasheet HTML 3Page - Intersil Corporation RFP2P10 Datasheet HTML 4Page - Intersil Corporation RFP2P10 Datasheet HTML 5Page - Intersil Corporation  
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3
Typical Performance Curves Unless otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
TC, CASE TEMPERATURE (
oC)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (
oC)
2.5
1.5
1.0
0.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
1
0.10
0.01
1
10
100
1000
OPERATION IN THIS AREA
MAY BE LIMITED BY rDS(ON)
TJ = MAX RATED
TC = 25
oC
3
2
1
0-2
-3
-4
-5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -6V
VGS = -5V
4
-1
VGS = -7V
VGS = -8V
VGS = -10V
VGS = -20V
VGS = -4V
PULSE DURATION = 80
µs
DUTY CYCLE
≤ 2%
TC = 25
oC
VDS = -15V
DUTY CYCLE
≤ 2%
2.5
1.5
0.5
0
-2
-4
-6
-8
-10
VGS, GATE TO SOURCE VOLTAGE (V)
2
1
-40oC
25oC
PULSE DURATION = 80
µs
0
3
3.5
125oC
125oC
25oC
-40oC
VGS = -10V
PULSE DURATION = 80
µs
DUTY CYCLE
≤ 2%
ID, DRAIN CURRENT (A)
4
3
2
1
0
01
2
3
4
5
RFP2P08, RFP2P10



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