Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

High voltage and high current

Excellent

hFE

Linearity

Low niose

,Complementary to C1815

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-50

V

Collector-Emitter Voltage

V

CEO

-50

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

0.15

A

Collector Power Dissipation

0.2

W

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC= -100u A,

IE=0

-50

V

Collector-emitter breakdown voltage

VCEO

IC= -0.1mA, IB=0

-50

V

Emitter-base breakdown voltage

VEBO

IE= -100 u A, IC=0

-5

V

Collector cut-off current

ICB

O

VCB=-50V ,

IE=0

-0.1

u A

Collector cut-off current

ICE

O

VCE= -50V ,

IB=0

-0.1

u A

Emitter cut-off current

IEB

O

VEB=- 5V,

IC=0

-0.1

u A

DC current gain

hFE

VCE=-6V,

IC= -2mA

130

400

Collector-emitter saturation voltage

VCE(sat)

IC=-100 mA, IB= -10mA

-0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=-100 mA, IB= -10mA

-1.1

V

Transition frequency

fT

VCE=-10V,

IC= -1mA

f=30MHz

80

MHz

CLASSIFICATIONOF

Rank

L

H

Range

130-200

200-400

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

A1015

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/