3-227

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

June 1998

Features

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

• Dose Rate

• Photo Current

- 10.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

Formerly available as type TA17766.

Description

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

field-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent

of

MIL-S-19500,

or

Space

equivalent

of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

Package

TO-254AA

RAD LEVEL

SCREENING LEVEL

PART NUMBER/BRAND

10K

Commercial

FSJ9160D1

10K

TXV

FSJ9160D3

100K

Commercial

FSJ9160R1

100K

TXV

FSJ9160R3

100K

Space

FSJ9160R4

G

D

S

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

S

G

D

File Number

4465.1

FSJ9160D,

FSJ9160R

44A, -100V, 0.055 Ohm, Rad Hard,

SEGR Resistant, P-Channel Power MOSFETs