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Die Characteristics

DIE DIMENSIONS:

(2032

µm x 2489µm x 533µm ±25.4µm)

80 x 98 x 21mils

±1mil

METALLIZATION:

Type: Al

Thickness: 12.5k

Å

SUBSTRATE POTENTIAL:

BACKSIDE FINISH:

Silicon

PASSIVATION:

Thickness: 13k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

60

PROCESS:

Bulk CMOS

Metallization Mask Layout

CD4015BT

13

3

14

15

12

11

10

2

1

16

4

5

6

7

8

9

98mils

80mils

CD4015BT