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IDT74FCT810CTEB Datasheet(PDF) 3 Page - Integrated Device Technology

No. de pieza IDT74FCT810CTEB
Descripción Electrónicos  FAST CMOS BUFFER/CLOCK DRIVER
PDF  6 Pages
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Fabricante Electrónico  IDT [Integrated Device Technology]
Página de inicio  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT74FCT810CTEB Datasheet(HTML) 3 Page - Integrated Device Technology

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IDT54/74FCT810BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
9.4
3
POWER SUPPLY CHARACTERISTICS
3103 tbl 05
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25
°C ambient.
3. Per TTL driven input; (VIN = 3.4V); all other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC +
∆ICC DHNT + ICCD (fONO)
ICC = Quiescent Current (ICCL, ICCH and ICCZ)
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fO= Output Frequency
NO= Number of Outputs at fO
All currents are in milliamps and all frequencies are in megahertz.
Symbol
Parameter
Test Conditions(1)
Min.
Typ.(2)
Max.
Unit
∆ICC
Quiescent Power Supply Current
TTL Inputs HIGH
VCC = Max.
VIN = 3.4V(3)
—
0.5
2.0
mA
ICCD
Dynamic Power Supply Current(4)
VCC = Max.
Outputs Open
OEA = OEB = GND
50% Duty Cycle
VIN = VCC
VIN = GND
—
60
100
µA/
MHz/bit
IC
Total Power Supply Current(6)
VCC = Max.
Outputs Open
fo= 25MHz
VIN = VCC
VIN = GND
—
7.5
13
mA
50% Duty Cycle
OEA = GND, OEB =VCC
VIN = 3.4V
VIN = GND
—
7.8
14.0
VCC = Max.
Outputs Open
fo = 50MHz
VIN = VCC
VIN = GND
—
30.0
50.5(5)
50% Duty Cycle
OEA = OEB = GND
VIN = 3.4V
VIN = GND
—
30.5
52.5(5)



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