GB20SHT12-CAL datasheet(1/3 Pages) GENESIC

No. de pieza	GB20SHT12-CAL

Descripción Electrónicos	Silicon Carbide Power Schottky Diode Chip

PDF	3 Pages

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Fabricante Electrónico	GENESIC [GeneSiC Semiconductor, Inc.]

Página de inicio	http://www.genesicsemi.com/

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Electrical Datasheet*

GB20SHT12-CAL

April 2012

http://www.genesicsemi.com/index.php/hit-sic/baredie

Page 1 of 2

Silicon Carbide Power

Schottky Diode Chip

Features

 1200 V Schottky rectifier

 250 °C maximum operating temperature

 Temperature independent switching behavior

 Superior surge current capability

 Positive temperature coefficient of VF

 Extremely fast switching speeds

 Superior figure of merit QC/IF

Maximum Ratings at Tj = 250 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Repetitive peak reverse voltage

VRRM

1200

V

Continuous forward current

IF

TC ≤ 205 °C

20

A

RMS forward current

IF(RMS)

TC ≤ 205 °C

35

A

Operating and storage temperature

Tj , Tstg

-55 to 250

°C

Electrical Characteristics at Tj = 250 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Diode forward voltage

VF

IF = 20 A, Tj = 25 °C

2.2

V

IF = 20 A, Tj = 210 °C

3.5

Reverse current

IR

VR = 1200 V, Tj = 25 °C

1.2

20

µA

VR = 1200 V, Tj = 250 °C

56

300

Total capacitive charge

QC

IF ≤ IF,MAX

dIF/dt = 200 A/μs

Tj = 210 °C

VR = 400 V

58

nC

VR = 960 V

95

Switching time

ts

VR = 400 V

< 49

ns

VR = 960 V

Total capacitance

C

VR = 1 V, f = 1 MHz, Tj = 25 °C

884

pF

VR = 400 V, f = 1 MHz, Tj = 25 °C

79

VR = 1000 V, f = 1 MHz, Tj = 25 °C

63

Thermal Characteristics

Thermal resistance, junction - case

RthJC

Assuming TO-276 package

0.49

°C/W

*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC

Semiconductor).

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GB20SHT12-CAL Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

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