SSF2816EB datasheet(2/5 Pages) SILIKRON

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©Silikron Semiconductor CO.,LTD.

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v1.1

SSF2816EB

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±4.5V,VDS=0V

±200

VGS=±10V,VDS=0V

±10

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.6

0.75

1.2

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=6.5A

16.5

mΩ

VGS=4V, ID=6A

mΩ

VGS=3.1V, ID=5.5A

mΩ

VGS=2.5V, ID=5.5A

mΩ

Forward Transconductance

gFS

VDS=10V,ID=6.5A

6.6

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Clss

VDS=8V,VGS=0V,

F=1.0MHz

600

Output Capacitance

Coss

330

Reverse Transfer Capacitance

Crss

140

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

VDD=10V,ID=1A

VGS=4.5V,RGEN=6Ω

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Total Gate Charge

VDS=10V,ID=7A,

VGS=4.5V

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=1.5A

0.84

1.2

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

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