2SC1008 datasheet(1/2 Pages) TGS

No. de pieza	2SC1008

Descripción Electrónicos	TO-92 Plastic-Encapsulate Transistors

PDF	2 Pages

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Fabricante Electrónico	TGS [Tiger Electronic Co.,Ltd]

Página de inicio	http://www.tgselec.com

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1 / 2 page

B,Aug,2014

TO – 92

1. EMITTER

2. BASE

3. COLLECTOR

TO-92 Plastic-Encapsulate Transistors

2SC1008

TRANSISTOR (NPN)

FEATURES

General Purpose Switching and Amplification

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA,IE=0

80

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.01mA,IC=0

8

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=2V, IC=50mA

40

400

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=50mA

0.4

V

Base-emitter saturation voltage

VBE (sat)

IC=500mA,IB=50mA

1.1

V

Collector output capacitance

Cob

VCB=10V,IC=0, f=1MHz

8

pF

Transition frequency

fT

VCE=10V,IC= 50mA

30

MHz

CLASSIFICATION OF hFE

RANK

R

O

Y

G

RANGE

40-80

70-140

120-240

200-400

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current

700

mA

PC

Collector Power Dissipation

800

mW

RθJA

Thermal Resistance From Junction To Ambient

156

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

TIGER ELECTRONIC CO.,LTD

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