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2SC458 Datasheet(PDF) 3 Page - Hitachi Semiconductor

No. de pieza 2SC458
Descripción Electrónicos  Silicon NPN Epitaxial
PDF  6 Pages
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Fabricante Electrónico  HITACHI [Hitachi Semiconductor]
Página de inicio  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC458 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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2SC458, 2SC2308
3
Electrical Characteristics (Ta = 25°C)
2SC458
2SC2308
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
55
V
I
C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
50
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—5
——
V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
0.5
0.5
µAV
CB =18 V, IE = 0
Emitter cutoff current
I
EBO
0.5
0.5
µAV
EB = 2 V, IC = 0
DC current transfer ratio h
FE*
1
100
500
100
320
V
CE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
0.2
0.2
V
I
C = 10 mA, IB = 1 mA
Base to emitter voltage
V
BE
0.67
0.75
0.67
0.75
V
V
CE = 12 V, IC = 2 mA
Gain bandwidth product f
T
230
230
MHz
V
CE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
1.8
3.5
1.8
3.5
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
4
10
4
10
dB
V
CE = 6 V, IC = 0.1 mA,
f = 1 kHz, R
g = 500 Ω
Small signal input
impedance
h
ie
16.5
16.5
k
V
CE = 5V, IC = 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
h
re
70
——70
× 10–6
Small signal current
trancefer ratio
h
fe
130
130
Small signal output
admittance
h
oe
11.0
11.0
µS
Note:
1. The 2SC458 and 2SC2308 are grouped by h
FE as follows.
BC
D
2SC458
100 to 200
160 to 320
250 to 500
2SC2308
100 to 200
160 to 320
See characteristic curves of 2SC458 (LG) and 2SC2310 except for the followings.



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