PD166017T1F datasheet(13/24 Pages) RENESAS

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PD166017T1F

Preliminary

R07DS0704EJ0100 Rev.1.00

Page 13 of 22

Apr 26, 2012

3.6.3

Power Dissipation under Reverse Battery Condition

In case of a reverse voltage is applied to the device, the N-Ch MOSFET will turn on only if a reverse current can flow

from IN pin through RCC and if |VCC – VIN| voltage is in range of 8 V (TYP).

In above conditions, power dissipation in the driver is generated by N-Ch Mosfet as well as RCC and RIS0. The power

dissipation in the N-Ch MOSFET depends on the load condition.

Overall power dissipation Pd(rev) can be calculated as follow.

Pd(rev) = Ron(rev) × IL(rev)

+ (VCC - Vf – IIN(rev) × RIN) × IIN(rev)

+ (VCC – IIS(rev) × RIS) × IIS(rev)

IIN(rev) = (VCC – 2 × Vf) / (RCC + RIN)

IIS(rev) = (VCC – Vf) / (RCC + RIS0 + RIS)

Thereverse current through the N-ch MOSFET has to be

limited by the connected load.

In order to turn on the N-ch MOSFET at reverse polarity

condition, the voltage at IN should be around 8V by using a

MOSFET or small diode in parallel to the input switch. RIN

should be estimated using the following formula.

RIN<(|VCC-8V|)/0.08A

-VCC

RCC

RIN

RIS

OUT

IIN(rev)

IIS(rev)

IL(rev)

RIS0

N-ch MOSFET

In case no current would flow from IN pin through RCC, the N-Ch MOSFET will not turn-on. Then power dissipation

mainly result from the body diode of the N-Ch MOSFET.

3.6.4

Device Behavior at Low Voltage Condition

If the supply voltage (VCC – VIN) drops below VCIN(Uv), the device will shut off and will remain off until the supply

voltage (VCC – VIN) recovers above VCIN(CPr).

VBAT

VCC – VIN

VOUT

VCIN(Uv)

VCIN(CPr)

IIN

VOUT/VCC – VIN

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