PI5PD2051B datasheet(3/12 Pages) PERICOM

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2013-07-0009

PT0317-5

07/31/13

PI5PD2041B/51B

70mΩ Current-Limited,

Power-Distribution Switches

Electrical Characteristics

Unless otherwise specified, VI(IN) = 5.5V, IO = 0.5A, VI(/EN) = 0V, VI(EN) = 5.5V.

Sym

Description

Test Conditions

(1)

Min

Typ

Max

Unit

Power Switch

RDS(on)

Static drain-source on-state resistance,

5V operation and 3.3V operation

VI(IN) = 5V or 3.3V, IO = 0.5A, -40°C

≤T

J≤ 125°C

135

mΩ

Static drain-source on-state resistance,

2.7V operation

(2)

VI(IN) = 2.7V, IO = 0.5A, -40°C ≤TJ ≤

125°C

150

mΩ

(2)

Rise time, output

VI(IN) = 5.5V

CL=1F,

RL=10Ω,

=25°C

0.6

1.5

VI(IN) = 2.7V

0.4

(2)

Fall time, output

VI(IN) = 5.5V

0.05

0.5

VI(IN) = 2.7V

0.05

0.5

Enable Input /EN or EN

VIH

High-level input voltage

2.7 V ≤ VI(IN) ≤ 5.5 V

VIL

Low-level input voltage

2.7 V ≤ VI(IN) ≤ 5.5 V

0.8

Input current

VI(/EN) = 0 V or 5.5 V

-0.5

0.5

A

ton

(2)

Turn on time

CL = 100F, RL = 10Ω

toff

(2)

Turn off time

CL = 100F, RL = 10Ω

Current Limit

IOS

Short-circuit output current

VI(IN)

=5V,

OUT

connected to GND,

device enabled into

short-circuit

TJ =25°C

0.75

1.25

-40°C ≤TJ ≤

125°C

0.7

1.3

IOC-TRIP

Over-current trip threshold

VI(IN)=5V, current ramp ( ≤100 A/s )

on OUT

1.1

1.5

2.5

Supply Current

ISTB

Input supply current at output disable

No load on OUT,

VI(/EN)=

5.5V,

VI(EN)=0V

TJ =25°C

0.1

A

-40°C ≤TJ ≤

125°C

0.2

ISS

Input supply current at output enable

No load on OUT,

VI(/EN)

0V,

VI(EN) = 5.5V

TA=25°C

-40°C ≤TJ ≤

125°C

Leakage current

OUT connected to

ground,

VI(/EN)

5.5V, or VI(EN) = 0V

-40°C ≤TJ ≤

125°C

Reverse leakage current

VI(OUT)=5.5V,

IN=

ground

(2)

TJ =25°C

0.1

Under-voltage Lockout

Low-level input voltage, IN

2.5

Hysteresis, IN

TJ =25°C

Over-current /OC

Output low voltage, VOL(/OC)

IO(/OC) = 5mA

0.4

Off-state current

(2)

VO(/OC) = 5V or 3.3V

A

/OC deglitch

(2)

/OC assertion or de-assertion

Thermal Shutdown

(3)

Thermal shutdown threshold

(2)

135

°C

Recovery from thermal shutdown

(2)

125

°C

Hysteresis

(2)

°C

Note:

(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into

account separately.

(2) Not tested in production, specified by design.

(3) The thermal shutdown only reacts under over current conditions.

PI5PD2051B Datasheet(PDF) 3 Page - Pericom Semiconductor Corporation

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