IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTT10P60

IXTH10P60

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

e

∅ P

TO-247 Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

TO-268 Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

5

10.5

S

C

iss

4665

pF

C

oss

V

437

pF

C

rss

157

pF

t

d(on)

33

ns

t

r

27

ns

t

d(off)

85

ns

t

f

35

ns

Q

g(on)

135

nC

Q

gs

V

30

nC

Q

gd

45

nC

R

thJC

0.42

°C/W

R

thCS

TO-247

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

- 10

A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 40

A

V

SD

I

- 3.0

V

t

rr

500

ns

Note

1: Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

V

R

I

V