IXTH90P10P datasheet(1/5 Pages) IXYS

No. de pieza	IXTH90P10P

Descripción Electrónicos	P-Channel Enhancement Mode

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

Logo

1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

-100

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

-100

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

- 90

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

- 225

A

I

A

T

C = 25°C

- 90

A

E

AS

T

C = 25°C

2.5

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

462

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

6

g

TO-247

4

g

DS99986B(01/13)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

-100

V

GS(th)

V

DS = VGS, ID = - 250μA

- 2.0

- 4.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

- 25

μA

T

J = 125°C

- 200

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

25 m

Ω

PolarPTM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

V

DSS

= - 100V

I

D25

= - 90A

R

DS(on) ≤

≤≤≤≤

25m

Ω

IXTT90P10P

IXTH90P10P

Features:

International Standard Packages

Avalanche Rated

Fast Intrinsic Diode

Rugged PolarPTM Process

Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

G

S

D (Tab)

D

TO-268 (IXTT)

S

G

D (Tab)

D

S

G

Número de pieza similar - IXTH90P10P

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
IXYS Corporation	IXTH90N15T	198Kb / 6P	Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
Inchange Semiconductor ...	IXTH90N15T	383Kb / 2P	isc N-Channel MOSFET Transistor

More results

Descripción similar - IXTH90P10P

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Linear Integrated Syste...	3N163-4	18Kb / 2P	P-CHANNEL ENHANCEMENT MODE
Advanced Power Electron...	AP3310H	86Kb / 6P	P-CHANNEL ENHANCEMENT MODE
	AP4407S	79Kb / 4P	P-CHANNEL ENHANCEMENT MODE
	AP4435M	85Kb / 6P	P-CHANNEL ENHANCEMENT MODE
	AP9563H	78Kb / 4P	P-CHANNEL ENHANCEMENT MODE
	AP9575H	77Kb / 4P	P-CHANNEL ENHANCEMENT MODE
Alpha & Omega Semicondu...	AO6409AL	285Kb / 5P	P-Channel Enhancement Mode
Unisonic Technologies	UT3401Z	307Kb / 5P	P-CHANNEL ENHANCEMENT MODE
IXYS Corporation	IXTR16P60P	129Kb / 5P	P-Channel Enhancement Mode
Supertex, Inc	VP0808L-G	575Kb / 3P	P-Channel Enhancement-Mode P-Channel Enhancement-Mode

More results

IXTH90P10P Datasheet(PDF) 1 Page - IXYS Corporation

IXTH90P10P Datasheet(HTML) 1 Page - IXYS Corporation

Número de pieza similar - IXTH90P10P

Descripción similar - IXTH90P10P

Html Pages

1 2 3 4 5

Datasheet Descarga

Enlace URL