IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

4,835,592 4,881,106

5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796

5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic values

(T

Min.

Typ.

Max.

g

fs

V

DS

= 10 V; I

28

36

S

C

iss

4400

pF

C

oss

V

800

pF

C

rss

290

pF

t

d(on)

23

ns

t

r

V

23

ns

t

d(off)

R

60

ns

t

f

17

ns

Q

g(on)

164

nC

Q

gs

V

30

nC

Q

gd

85

nC

R

thJC

0.31 K/W

R

thCK

(TO-247)

0.25

K/W

Source-Drain Diode

Ratings and Characteristics

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

60

A

I

SM

Repetitive; pulse width limited by T

JM

240

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

300

ns

Q

rr

3.0

µC

IXTH 60N25

IXTT 60N25

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3

TO-268 Outline

Min Recommended Footprint