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GI910 Datasheet(PDF) 1 Page - General Semiconductor

No. de pieza GI910
Descripción Electrónicos  MEDIUM-SWITCHING PLASTIC RECTIFIER
PDF  2 Pages
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Fabricante Electrónico  GE [General Semiconductor]
Página de inicio  http://www.vishay.com
Logo GE - General Semiconductor

GI910 Datasheet(HTML) 1 Page - General Semiconductor

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GI910 THRU GI917
MEDIUM-SWITCHING PLASTIC RECTIFIER
Reverse Voltage - 50 to 800 Volts
Forward Current - 3.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ High surge current capability
♦ Construction utilizes void-free molded plastic technique
♦ High forward current operation
♦ Fast switching for high efficiency
♦ High temperature soldering guaranteed:
250°C/10 seconds, 0.375 (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
GI910
GI911
GI912
GI914
GI916
GI917
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
Volts
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
Volts
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=90°C
I(AV)
3.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
100.0
Amps
rated load (JEDEC Method)
Maximum instantaneous forward voltage at:
3.0A
1.25
9.4A, TJ=175°C
VF
1.10
Volts
Maximum DC reverse current
TA=25°C
10.0
at rated DC blocking voltage
TA=100°C
IR
300.0
µA
Typical junction capacitance (NOTE 1)
CJ
28.0
pF
Maximum reverse recovery time (NOTE 2)
trr
750
ns
Maximum reverse recovery current
IRM(REC)
2.0
Amps
Typical thermal resistance (NOTE 3)
R
ΘJA
22.0
R
ΘJL
8.0
°C/W
Operating junction and storage temperature range
TJ ,TSTG
-50 to +150
°C
NOTES:
(1) Measured at 1 MHz and applied reverse voltage of 4.0 Volts
(2) Reverse recovery test conditions: IF=1.0A, VR=30V, di/dt=50A/
µs, and Irr=10% IRM for measurement of trr
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
both leads equally heat sink
4/98
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
DO-201AD
Dimensions in inches and (millimeters)


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