MB84VB2000 datasheet(13/28 Pages) FUJITSU

No. de pieza	MB84VB2000

Descripción Electrónicos	8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY

PDF	28 Pages

Scroll/Zoom	100%

Fabricante Electrónico	FUJITSU [fujitsu semiconductor]

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MB84VB2000-10/MB84VB2001-10

s AC CHARACTERISTICS

•CE Timing

• Read Only Operations Characteristics

Note: Test Conditions–Output Load: 1 TTL gate and 30 pF

Input rise and fall times: 5 ns

Input pulse levels: 0.0 V to 3.0 V

Timing measurement reference level

Input: 1.5 V

Output: 1.5 V

Parameter

Symbols

Description

Test Setup

-10

Unit

JEDEC

Standard

—tCCR

CE Recover Time

—

Min.

Parameter

Symbols

Description

Test

Setup

-10

(Note)

Unit

JEDEC

Standard

Min.

Max.

tAVAV

tRC

Read Cycle Time

—

100

—

tAVQV

tACC

Address to Output Delay

CE = VIL

OE = VIL

—100

tELQV

tCE

Chip Enable to Output Delay

OE = VIL

—100

tGLQV

tOE

Output Enable to Output Delay

—

tEHQZ

tDF

Chip Enable to Output High-Z

—

tGHQZ

tDF

Output Enable to Output High-Z

—

tAXQX

tOH

Output Hold Time from Addresses,

CE or OE, Whichever Occurs First

—0

—

—tREADY

RESET Pin Low to Read Mode

—

µs

—

tELFL

tELFH

CE or BYTE Switching Low or High

—

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