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AT45DB041D Datasheet(PDF) 9 Page - List of Unclassifed Manufacturers

No. de pieza AT45DB041D
Descripción Electrónicos  4-megabit 2.5-volt or 2.7-volt DataFlash
PDF  53 Pages
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Fabricante Electrónico  ETC2 [List of Unclassifed Manufacturers]
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AT45DB041D Datasheet(HTML) 9 Page - List of Unclassifed Manufacturers

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9
3595T–DFLASH–8/2013
AT45DB041D
7.5
Block Erase
A block of eight pages can be erased at one time. This command is useful when large amounts
of data has to be written into the device. This will avoid using multiple Page Erase Commands.
To perform a block erase for the DataFlash standard page size (264-bytes), an opcode of 50H
must be loaded into the device, followed by three address bytes comprised of four don’t care
bits, eight page address bits (PA10 - PA3) and 12 don’t care bits. The eight page address bits
are used to specify which block of eight pages is to be erased. To perform a block erase for the
binary page size (256-bytes), the opcode 50H must be loaded into the device, followed by three
address bytes consisting of five don’t care bits, eight page address bits (A18 - A11) and 11 don’t
care bits. The nine page address bits are used to specify which block of eight pages is to be
erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected
block of eight pages. The erase operation is internally self-timed and should take place in a max-
imum time of tBE. During this time, the status register will indicate that the part is busy.
Table 7-1.
Block Erase Addressing
PA10/
A18
PA9/
A17
PA8/
A16
PA7/
A15
PA6/
A14
PA5/
A13
PA4/
A12
PA3/
A11
PA2/
A10
PA1/
A9
PA0/
A8
Block
00000000
X
X
X
0
00000001
X
X
X
1
00000010
X
X
X
2
00000011
X
X
X
3
11111100
X
X
X
252
11111101
X
X
X
253
11111110
X
X
X
254
11111111
X
X
X
255



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