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NPT1012 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

No. de pieza NPT1012
Descripción Electrónicos  Gallium Nitride 28V, 25W RF Power Transistor
PDF  8 Pages
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Fabricante Electrónico  MA-COM [M/A-COM Technology Solutions, Inc.]
Página de inicio  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

NPT1012 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

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NPT1012
NDS-025 Rev. 3, April 2013
NPT1012
Page 2
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA)
100
-
-
V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
-
-
4
mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 8mA)
-2.3
-1.8
-1.3
V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 225mA)
-2.0
-1.5
-1.0
V
RON
On Resistance
(VGS = 2V, ID = 60mA)
-
0.44
0.55
W
ID,MAX
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2.0V)
-
5.4
-
A
Symbol
Parameter
Max
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
-10 to 3
V
IG
Gate Current
40
mA
PT
Total Device Power Dissipation (Derated above 25°C)
44
W
TSTG
Storage Temperature Range
-65 to 150
°C
TJ
Operating Junction Temperature
200
°C
HBM
Human Body Model ESD Rating (per JESD22-A114)
1B (+/-500V)
MM
Machine Model ESD Rating (per JESD22-A115)
A (>100V)
CDM
Charge Device Model ESD Rating (per JESD22-C101)
IV (>1000V)
DC Specifications: TC = 25°C
Symbol
Parameter
Min
Typ
Max
Units
qJC
Thermal Resistance (Junction-to-Case),
TJ = 180 °C
-
4.0
-
°C/W
Thermal Resistance Specification



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