CSC1674 datasheet(1/3 Pages) CDIL

No. de pieza	CSC1674

Descripción Electrónicos	NPN SILICON PLANAR EPITAXIAL TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	CDIL [Continental Device India Limited]

Página de inicio	http://www.cdilsemi.com

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NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CSC1674

TO-92

Plastic Package

TV PIF Amplifier, FM Tuner RF Amplifier , Mixer, Oscillator

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC )

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector Base Voltage

VCBO

30

V

Collector Emitter Voltage

VCEO

20

V

Emitter Base Voltage

VEBO

4V

Collector Current

IC

20

mA

Collector Dissipation

Pc

250

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

ºC

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Base Voltage

VCBO

IC=10µA, IE=0

30

-

V

Collector Emitter Voltage

VCEO

IC=5mA, IB=0

20

-

V

Emitter Base Voltage

VEBO

IE=10µA, IC=0

4-

-

V

Collector Cut off Current

ICBO

VCB=30V, IE = 0

-

0.1

µA

Emitter Cut off Current

IEBO

VEB=4V, IC = 0

-

0.1

µA

DC Current Gain

hFE

VCE=6V, IC=1mA

40

-

240

Base Emitter on Voltage

VBE(on)

VCE=6V, IC=1mA

-

0.72

-

V

Collector Emitter Saturation

VCE(sat)

IC=10mA, IB=1mA

-

0.3

V

Voltage

Current Gain - Bandwidth Product

fT

VCE=6V, IC=1mA

400

-

MHz

Output Capacitance

Cob

IE=0, VCB=6V, f=1MHz

-

1.2

-

pF

Collector- Base Time Constant

CC rbb'

VCE=6V, IC=1mA

--

15

ps

f=31.9 MHz

Common Source Noise Figure

NF

VCE=6V, IE=1mA

-

5.0

dB

Rs=500Ω, f=100MHz

Power Gain

Gpe

VCE=6V, IE=1mA

18

-

dB

Rs=500Ω, f=100MHz

(Typ)

Classification

R

O

Y

hFE

40 - 80

70 - 140

120 - 240

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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