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MADA2030G Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MADA2030G Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 4 page ![]() • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 5-Bit GaAs Digital Attenuator DC- 2.0 GHz Rev. V3 MADA2030G ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Electrical Specifications: TA = 25°C, Z0 = 50 Ω Parameter Test Conditions Units Min. Typ. Max. Reference Insertion Loss DC - 1.0 GHz DC - 2.0 GHz dB dB — — — — 1.9 2.3 Attenuation Accuracy DC - 2.0 GHz ± (0.3 dB ± 3% of attenuation setting in dB) dB VSWR (Worst Case) DC - 2.0 GHz Ratio — — 1.6:1 Phase Balance (For any bit or combinations of bits per unit) 500 MHz 1.0 GHz 2.0 GHz ° ° ° — — — +1 / -2 +2 / -3 +4 / -6 — — — Switching Characteristics 50% Control to 90% RF, 50% Control to 10% RF Unfiltered Transients nS mV — — 3 7 — — Input Power for 1 dB Compression 100 MHz Above 500 MHz dBm dBm — — 24 27 — — IP2 for two-tone input power up to +5 dBm 100 MHz Above 500 MHz dBm dBm — — 45 68 — — IP3 for two-tone input power up to +5 dBm 100 MHz Above 500 MHz dBm dBm — — 40 45 — — Control Voltages (Complementary Logic) VIN Low, 0 to -0.2 V VIN Hi, -5 V VIN Hi, -8 V µA µA µA — — — — 75 — 5 — 250 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Truth Table 3 3. 0 = VIN Low, 0 to -0.2 V, 1 = VIN Hi, -5 V to -8 V VC1 VC2 VC3 VC3 VC4 VC4 VC5 VC5 Attenuation Setting 1 1 1 0 1 0 1 0 Reference 0 1 1 0 1 0 1 0 0.5 dB 1 0 1 0 1 0 1 0 1 dB 1 1 0 1 1 0 1 0 2 dB 1 1 1 0 0 1 1 0 4 dB 1 1 1 0 1 0 0 1 8 dB 0 0 0 1 0 1 0 1 15.5 dB Schematic |
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