IRF620S datasheet(4/8 Pages) VISHAY

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Document Number: 91028

S11-1046-Rev. D, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF620S, SiHF620S

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

750

600

450

150

300

100

101

VDS, Drain-to-Source Voltage (V)

iss

rss

oss

GS = 0 V, f = 1 MHz

iss = Cgs + Cgd, Cds Shorted

rss = Cgd

oss = Cds + Cgd

91028_05

QG, Total Gate Charge (nC)

315

D = 4.8 A

DS = 40 V

DS = 100 V

For test circuit

see figure 13

DS = 160 V

91028_06

101

100

VSD, Source-to-Drain Voltage (V)

0.5

1.5

1.3

1.0

0.8

°C

150

°C

GS = 0 V

91028_07

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

C = 25 °C

J = 150 °C

Single Pulse

102

0.1

110

102

103

91028_08

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