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MASW-005102 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MASW-005102 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
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1 / 7 page ![]() • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 HMIC™ Silicon PIN Diode Switch RoHS Compliant with Integrated Bias Network Rev. V2 MASW-005102-13600 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Parameter Absolute Maximum Operating Temperature -65oC to +125oC Storage Temperature -65oC to +150oC Junction Temperature +175oC Applied Reverse Voltage 50V RF Incident Power +33dBm C.W. 1 Bias Current +25°C ±20mA Note: 1. Maximum operating conditions for a combination of RF power, D.C. bias and temperature: Features ♦ Broad Bandwidth Specified up to 18 GHz ♦ Usable up to 26 GHz ♦ Integrated Bias Network ♦ Low Insertion Loss / High Isolation ♦ Rugged, Glass Encapsulated Construction ♦ Fully Monolithic Description The MASW-005102-13600 device is a SP5T broadband switch with integrated bias network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. Yellow areas denote wire bond pads Applications These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80nS switching speeds can be achieved. |
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