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MASW-005102 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

No. de pieza MASW-005102
Descripción Electrónicos  HMIC??Silicon PIN Diode Switch
PDF  7 Pages
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Fabricante Electrónico  MA-COM [M/A-COM Technology Solutions, Inc.]
Página de inicio  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MASW-005102 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
HMIC™ Silicon PIN Diode Switch
RoHS Compliant
with Integrated Bias Network
Rev. V2
MASW-005102-13600
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Parameter
Absolute Maximum
Operating Temperature
-65oC to +125oC
Storage Temperature
-65oC to +150oC
Junction Temperature
+175oC
Applied Reverse Voltage
50V
RF Incident Power
+33dBm C.W.
1
Bias Current +25°C
±20mA
Note:
1. Maximum
operating
conditions
for
a
combination of RF power, D.C. bias and
temperature:
Features
♦ Broad Bandwidth Specified up to 18 GHz
♦ Usable up to 26 GHz
♦ Integrated Bias Network
♦ Low Insertion Loss / High Isolation
♦ Rugged, Glass Encapsulated Construction
♦ Fully Monolithic
Description
The MASW-005102-13600 device is a SP5T broadband
switch with integrated bias network utilizing M/A-COM's
HMICTM (Heterolithic Microwave Integrated Circuit)
process, US Patent 5,268,310. This process allows the
incorporation of silicon pedestals that form series and
shunt diodes or vias by imbedding them in low loss,
low dispersion glass. By using small spacing between
elements, this combination of silicon and glass gives
HMIC devices low loss and high isolation performance
with exceptional repeatability through low millimeter
frequencies. Large bond pads facilitate the use of low
inductance
ribbon
bonds,
while
gold
backside
metallization allows for manual or automatic chip
bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders
or electrically conductive silver epoxy.
Yellow areas denote wire bond pads
Applications
These high performance switches are suitable for use
in multi-band ECM, Radar, and instrumentation control
circuits where high isolation to insertion loss ratios are
required. With a standard +5V/-5V, TTL controlled PIN
diode driver, 80nS switching speeds can be achieved.


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