JAN2N708 datasheet(1/2 Pages) MICROSEMI

No. de pieza	JAN2N708

Descripción Electrónicos	NPN SILICON SWITCHING TRANSISTOR

PDF	2 Pages

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Fabricante Electrónico	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/312

Devices

Qualified Level

2N708

JAN, JANTX

MAXIMUM RATINGS

Ratings

Symbol

Value

Units

Collector-Emitter Voltage

VCEO

15

Vdc

Collector-Base Voltage

VCBO

40

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector-Emitter Voltage

VCER

20

Vdc

Total Power Dissipation

@ TA = +25

0C (1)

@ TC = +25

0C (2)

PT

0.36

1.2

W

Operating & Storage Junction Temperature Range

Top, Tstg

-65 to +200

0C

1) Derate linearly 2.06 mW/

0C for TA > 250C

2) Derate linearly 6.90 mW/

0C for TC > 250C

TO-18 (TO-206AA)*

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TA = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

IC = 1.0 µAdc

V(BR)CBO

40

Vdc

Emitter-Base Breakdown Voltage

IE = 10 µAdc

V(BR)EBO

5.0

Vdc

Collector-Emitter Breakdown Voltage

IC = 10 mAdc

V(BR)CEO

15

Vdc

Collector-Emitter Breakdown Voltage

IC = 10 mAdc, RBE

≤ 10 Ω

V(BR)CER

20

Vdc

Collector-Base Cutoff Current

VCB = 20 Vdc

ICBO

25

ηAdc

Emitter-Base Cutoff Current

VEB = 4.0 Vdc

IEBO

80

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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