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TA329Q Datasheet(PDF) 1 Page - Dynex Semiconductor

No. de pieza TA329Q
Descripción Electrónicos  Asymmetric Thyristor
PDF  10 Pages
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Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

TA329Q Datasheet(HTML) 1 Page - Dynex Semiconductor

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TA329..Q
1/10
APPLICATIONS
s High Frequency Applications
s High Power Choppers And Inverters
s Welding
s Ultrasonic Generators
s Induction Heating
s 400Hz UPS
s PWM Inverters
FEATURES
s Low Loss Asymmetrical Diffusion Structure
s High Interdigitated Amplifying Gate
s Gate Assisted Turn-off With Exclusive Bypass Diode
s Fully Characterised For Operation up to 40kHz
s Directly Compatible With 220-480 A.c. Mains
VOLTAGE RATINGS
KEY PARAMETERS
V
DRM
1400V
I
T(RMS)
370A
I
TSM
2000A
dVdt
1000V/
µs
dI/dt
1000A/
µs
t
q
7.0
µs
1400
1200
1000
TA329 14 Q
TA329 12 Q
TA329 10 Q
Repetitive Peak
Reverse Voltage
V
RRM
V
10
10
10
Lower voltage grades available.
Type Number
Repetitive Peak
Off-state Voltage
V
DRM
V
Outline type code: MU86.
See Package Details for further information.
CURRENT AND SURGE RATINGS
Symbol
Parameter
Conditions
Double Side Cooled
I
T(RMS)
RMS value
I
TSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
Units
Max.
Half sine wave, duty cycle 50%, T
case = 80
oC,
T
j = 125˚C.
370
A
T
j = 125
oC, t
p = 1ms, VR = 0
2000
A
t
p ≥ 10ms
20 x 103
A2s
TA329..Q
Asymmetric Thyristor
Advance Information
Replaces March 1998 version, DS4680-2.1
DS4680-3.0 January 2000


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