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DK13 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DK13 Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 13 page  3/13 www.dynexsemi.com DK13..FW DYNAMIC CHARACTERISTICS V TM Parameter Symbol Conditions Maximum on-state voltage At 300A peak, T case = 25 oC I RRM/IDRM Peak reverse and off-state current At V RRM/VDRM, Tcase = 125 oC Gate source 20V, 20 Ω t r < 0.5µs, Tj = 125˚C dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V DRM Tj = 125 oC, Gate open circuit Min. Max. Units - 2.35 V -15 mA - 200 V/ µs Repetitive 50Hz - 500 A/ µs Non-repetitive - 800 A/ µs Rate of rise of on-state current dI/dt V T(TO) Threshold voltage At T vj = 125 oC r T On-state slope resistance At T vj = 125 oC 1.65 -V - 3.5 m Ω Delay time t gd -3 µs Total turn-on time t (ON)TOT - 1.5 µs T j = 25˚C, IT = 50A, V D = 300V, IG = 1A, dI/dt =50A/ µs, dI G/dt = 1A/µs *Typical value. I H Holding current T j = 25 oC, I TM = 1A, VD = 12V 60* - mA T j = 125˚C, IT = 100A, VR = 50V, dV/dt = 200V/ µs (Linear to 60% V DRM), dI R/dt = 30A/µs, Gate open circuit Turn-off time t q 10 - µs t q code: W GATE TRIGGER CHARACTERISTICS AND RATINGS V DRM = 12V, T case = 25 oC, R L = 6Ω Conditions Parameter Symbol V GT Gate trigger voltage V DRM = 12V, Tcase = 25 oC, R L = 6Ω I GT Gate trigger current V GD Gate non-trigger voltage At V DRM Tcase = 125 oC, R L = 1kΩ - 3.0 V - 200 mA - 0.2 V Typ. Max. Units V RGM Peak reverse gate voltage I FGM Peak forward gate current Anode positive with respect to cathode P GM Peak gate power P G(AV) Mean gate power - 5.0 V -4 A -16 W - 3.0 W |
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