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DF45110 Datasheet(PDF) 2 Page - Dynex Semiconductor

No. de pieza DF45110
Descripción Electrónicos  Fast Recovery Diode
PDF  8 Pages
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Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DF45110 Datasheet(HTML) 2 Page - Dynex Semiconductor

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SURGE RATINGS
Conditions
Max.
Units
3.5
kA
61.25 x 103
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM, Tj = 150
oC
2.8
kA
39.2 x 103
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM, Tj = 150
oC
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
oC/W
-
0.133
Anode dc
Clamping force 5.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.02
oC/W
oC/W
Cathode dc
-
0.147
oC/W
Double side cooled
-
0.07
oC/W
T
stg
Storage temperature range
–55
150
oC
kN
5.5
4.5
Clamping force
-
T
vj
Virtual junction temperature
Forward (conducting)
-
150
oC
-
t
rr
100
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
µs, T
j = 125
oC-
40
V
At T
vj = 125
oC
-
1.5
m
Ω
At T
vj = 125
oC
-
1.6
V
1.7
-
-
-40
A
-25
µC
1.22
-
µs
At V
RRM, Tcase = 125
oC-
mA
At 600A peak, T
case = 25
oC
-
2.65
V
Conditions
Max.
I
F = 500A, diRR/dt = -80A/µs
T
case = 125
oC, V
R = 100V
CHARACTERISTICS



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