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DF45112 Datasheet(PDF) 1 Page - Dynex Semiconductor

No. de pieza DF45112
Descripción Electrónicos  Fast Recovery Diode
PDF  8 Pages
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Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DF45112 Datasheet(HTML) 1 Page - Dynex Semiconductor

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DF451
1/8
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Recovery Charge
Applications
s
Induction Heating
s
A.C. Motor Drives
s
Inverters And Choppers
s
Welding
s
High Frequency Rectification
s
UPS
Voltage Ratings
KEY PARAMETERS
V
RRM
1600V
I
F(AV)
295A
I
FSM
3500A
Q
r
25
µC
t
rr
1.22
µs
CURRENT RATINGS
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load, T
case = 65
oC
295
A
T
case = 65
oC
543
A
T
case = 65
oC
391
A
Half wave resistive load, T
case = 65
oC
220
A
T
case = 65
oC
348
A
T
case = 65
oC
285
A
1600
1400
1200
1000
800
600
DF451 16
DF451 14
DF451 12
DF451 10
DF451 08
DF451 06
Conditions
V
RSM
= V
RRM
+ 100V
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: M771.
See Package Details for further information.
DF451
Fast Recovery Diode
Replaces March 1999 version, DS4142-4.0
DS4143-5.0 January 2000


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