SILICON TRANSISTOR

FEATURES

•

Low current consumption and high gain

•

Ultra Super Mini-Mold package

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5181

50 units/box

2SC5181-T1

3 000 units/reel

*

Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

Collector to Base Voltage

5V

Collector to Emitter Voltage

3V

Emitter to Base Voltage

2V

Collector Current

10

mA

Total Power Dissipation

30

mW

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C

2SC5181

Document No. P12105EJ2V0DS00 (2nd edition)

(Previous No. TC-2478)

Date Published

November 1996 N

Printed in Japan

©

1994

DATA SHEET

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

1.6 ± 0.1

0.8 ± 0.1

3

2

1

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

PACKAGE DIMENSIONS

(Units: mm)

Embossed tape, 8 mm wide, pin No. 3

(collector) facing the perforation

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.