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ACR44U08LE Datasheet(PDF) 2 Page - Dynex Semiconductor

No. de pieza ACR44U08LE
Descripción Electrónicos  Fast Turn-off Asymmetric Thyristor
PDF  7 Pages
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Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

ACR44U08LE Datasheet(HTML) 2 Page - Dynex Semiconductor

  ACR44U08LE Datasheet HTML 1Page - Dynex Semiconductor ACR44U08LE Datasheet HTML 2Page - Dynex Semiconductor ACR44U08LE Datasheet HTML 3Page - Dynex Semiconductor ACR44U08LE Datasheet HTML 4Page - Dynex Semiconductor ACR44U08LE Datasheet HTML 5Page - Dynex Semiconductor ACR44U08LE Datasheet HTML 6Page - Dynex Semiconductor ACR44U08LE Datasheet HTML 7Page - Dynex Semiconductor  
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ACR44U
2/7
SURGE RATINGS
Conditions
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) forward current
I
2tI2t for fusing
1500
A2s
550
A
10ms half sine; T
case = 125
oC
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
Thermal resistance - junction to case
R
th(j-c)
Symbol
Parameter
d.c.
-
0.35
oC/W
Mounting torque 3.5Nm
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.25
-
oC/W
T
vj
Virtual junction temperature
On-state (conducting)
-
125
oC
T
stg
Storage temperature range
-
3.5
-55
125
oC
Mounting torque
4.0
Nm
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 100A peak, T
case = 25
oC
I
RRM/IDRM
Peak reverse and off-state current
At V
RRM/VDRM, Tcase = 125
oC
From V
DRM to 125A. Gate source 15V, 15Ω
t
r = 50ns
dV/dt
Maximum linear rate of rise of off-state voltage
To V
DRM Tj = 125
oC, gate open circuit
Typ.
Max.
Units
-V
-
20/10
mA
-
600*
V/
µs
-
2000
A/
µs
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
-
r
T
On-state slope resistance
-
Latching current
1.5
-V
-
13.3
m
Ω
-
I
L
120
-
mA
I
H
Holding current
-
t
d
Delay time
V
D = 300V, gate source = 15V, 15Ω
25
-
mA
-
250
ns
I
T = 50A, square wave tp = 50µs, Tj = 120˚C,
dI
R/dt = 50A/µs, dV/dt = 600V/µs
to V
DRM,
gate voltage at turn-off 3.5-4.5V. V
R = -1V.
µs
6.0
-
Turn-off time (with antiparallel diode)
t
q
2.7
* Available to 1000V/
µs.
T
case
= 125˚C unless otherwise stated.



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