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2SC5010 Datasheet(PDF) 2 Page - NEC |
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2SC5010 Datasheet(HTML) 2 Page - NEC |
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2 / 10 page ![]() 2SC5010 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 0.1 µAVCB = 5 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µAVEB = 1 V, IC = 0 DC Current Gain hFE 75 150 VCE = 3 V, IC = 10 mA*1 Gain Bandwidth Product fT 12.0 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz Feed-Back Capacitance Cre 0.4 0.7 pF VCE = 3 V, IE = 0 , f = 1 MHz*2 Insertion Power Gain |S21e|2 7.0 8.5 dB VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure NF 1.5 2.5 dB VCE = 3 V, IC = 3 mA, f = 2 GHz *1 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification Rank FB Marking 83 hFE 75 to 150 |
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