IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA20N50P3 IXFA20N50P3

IXFQ20N50P3 IXFH20N50P3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

 300s, duty cycle, d  2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

11

18

S

C

iss

1800

pF

C

oss

V

230

pF

C

rss

8.3

pF

R

Gi

Gate Input Resistance

2.3



t

d(on)

10

ns

t

r

5

ns

t

d(off)

43

ns

t

f

9

ns

Q

g(on)

36

nC

Q

gs

V

7

nC

Q

gd

13

nC

R

thJC

0.36

C/W

R

thCS

TO-220

0.50

C/W

TO-247 & TO-3P

0.25

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

20

A

I

SM

Repetitive, Pulse Width Limited by T

JM

80

A

V

SD

I

1.4

V

t

rr

250

ns

I

RM

8.0

A

Q

RM

0.6

μC

I

V

Resistive Switching Times

V

R

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.